Plasma Technology  

1 µm deep etch
OPT application lab, Yatton (UK)


Plasmalab System 100
with loadlock and ICP380 source

Ta ICP Etching


Plasmalab System 100/ 133
Plasmalab 80 Plus

Inductive Coupled Plasma ICP - RIE
Cl based process

anisotropic etch
rate: > 60 nm/ min
selectivity to ebeam resist > 2 :1
selectivity to Al2O3 mask > 16 :1
very high selectivity to underlaying SiN or SiC
(X ray mask absorber on SiN or SiC membrane)
uniformity over 4" dia area: < +/- 4 %
low damage etch at < 40 Volt self bias

The ICP technology has replaced the ECR technology
used here originally in 1994 - 1997, see ICP vs ECR.


ICP technology

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