TBTDMT (and TBTDET)
N2/H2 (or NH3) plasma
GPC 0.42 Å/cycle @ 350°C
0.25 nm/ min @ 350°C
for the insulating phase Ta3N5
Resistivity < 1000 µ ohm cm
using H2 plasma
for the conductive phase
valve between remote ICP source
spectroscopic ellipsometry optional
Why remote plasma ALD ?
A "remote plasma" makes sure, the substrates
are NOT in contact with the plasma !
The remote plasma just cracks molecules,
so that very reactive species can be used for
the growth process.
Such reactive species often enable a very
efficient plasma preclean/ conditioning of the
substrates, lead to cleaner films and lower
the deposition temperature.
In Oxford systems it is possible to
ALD processes using
- the thermal only method
- ozone assisted processes
- remote plasma assisted processes
together without any hardware change.
Multiple step processes using all technologies
can be chosen from the software.