Plasma Technology  


Pure H plasma gives TaN conductive phase,
all others give Ta3N5 insulating phase.


GRC and RI vs precursor dose time
(growth rate per cycle,
refractive index)



FlexAl

TaN / Ta3N5 ALD by remote plasma



Precursor:
TBTDMT (and TBTDET)
N2/H2 (or NH3) plasma

GPC 0.42 Å/cycle @ 350°C

0.25 nm/ min @ 350°C
for the insulating phase Ta3N5

Resistivity < 1000 µ ohm cm
using H2 plasma
for the conductive phase

 

 

 

 

 

 



ALD schematic
valve between remote ICP source
and chamber,
spectroscopic ellipsometry optional

OpAl

Why remote plasma ALD ?

A "remote plasma" makes sure, the substrates
are NOT in contact with the plasma !

The remote plasma just cracks molecules,
so that very reactive species can be used for
the growth process.

Such reactive species often enable a very
efficient plasma preclean/ conditioning of the
substrates, lead to cleaner films and lower
the deposition temperature.

In Oxford systems it is possible to run
ALD processes using
- the thermal only method
- ozone assisted processes
- remote plasma assisted processes
together without any hardware change.
Multiple step processes using all technologies
can be chosen from the software.


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