Plasma Technology  




AES analysis of the Ta2O5
film with impurities below
the detection limit (2%)

Ta2O5 radical assisted ALD

O2 plasma


temperature range: 100 - 300° C

GPC 1 Å/cycle @ 300°C

rate: 0.6 nm/ min at 300° C

Refractive index 2.15

Dielectric constant: 23

uniform over up to 200 mm wafer






ALD schematic
valve between remote ICP source
and chamber,
spectroscopic ellipsometry optional

Why remote plasma ALD ?

A "remote plasma" makes sure, the substrates
are NOT in contact with the plasma !

The remote plasma just cracks molecules,
so that very reactive species can be used for
the growth process.

Such reactive species often enable a very
efficient plasma preclean/ conditioning of the
substrates, lead to cleaner films and lower
the deposition temperature.

In Oxford systems it is possible to run
ALD processes using
- the thermal only method
- ozone assisted processes
- remote plasma assisted processes
together without any hardware change.
Multiple step processes using all technologies
can be chosen from the software.

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