temperature range: 100 - 300° C
GPC 1 Å/cycle @ 300°C
rate: 0.6 nm/ min at 300° C
Refractive index 2.15
Dielectric constant: 23
uniform over up to 200 mm wafer
valve between remote ICP source
spectroscopic ellipsometry optional
Why remote plasma ALD ?
A "remote plasma" makes sure, the substrates
are NOT in contact with the plasma !
The remote plasma just cracks molecules,
so that very reactive species can be used for
the growth process.
Such reactive species often enable a very
efficient plasma preclean/ conditioning of the
substrates, lead to cleaner films and lower
the deposition temperature.
In Oxford systems it is possible to
ALD processes using
- the thermal only method
- ozone assisted processes
- remote plasma assisted processes
together without any hardware change.
Multiple step processes using all technologies
can be chosen from the software.