Plasma Technology  


OPT application lab:
TEOS ICP PECVD in a 50 µm deep MEMS
device with 5 : 1 aspect ratio
top of the trench 45 % of the nominal thickness
middle 28 %, trench bottom 32 %
base of the trench 50 %



SiO2 by ICP PECVD is suitable for
the conformal coating of deep structures.

TEOS SiO2 ICP PECVD Deposition


The deposition work was carried out on a MEMS structure,
where 50 µm deep lines were etched by the gas chopping
("Bosch") process.

 

Process Chemistry : TEOS, O2, Ar
Deposition Rate : > 15 nm/min
low and controllable stress
Uniformity: < ± 5%

 



ICP - PECVD

 


Plasmalab System 133
(with vacuum loadlock,
ICP source not shown)

The (blue) TEOS bubbler is attached to the side.

see the ALD bubbler for more details

tetraethoxysilane or tetraethyl orthosilicate


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