Plasma Technology  


OPT application lab:
22 µm deep Ti etch
PR mask intact


ICP schematic

Ti dry etching


Results:

Chemistry: Cl based process

Low damage etch conditions

etch rate:  > 200 nm/min

Selectivity to PR  ca 1:1

Profile: Anisotropic


Plasmalab System 100:
dual chamber cluster: ICP / RIE


Technology:

Reactive Ion Etching

with ICP Source (2 or 13.56 MHz)

Inductive Coupled Plasma

13.56 MHz Plasma Excitation

RF driven substrate electrode

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