Plasma Technology  


Titanium reflectivity vs. thickness
for films deposited at low temperature


Titanium resistivity vs. thickness
for films deposited at low temperature

Ti magnetron sputter deposition


magnetron sputtering


Equipment:
Plasmalab System 400
(max 4 200 mm targets)

Technology:
Magnetron Sputtering
rotating table
DC magnetron

Results:
Resistivity 70 µ ohm cm (400 nm layer)
Reflectivity (@436 nm relative to Si)
  > 115 % (500 nm layer)
rate: 30 nm/ min (rotating)
uniformity: +/- 5 % (6” wafer)
rate: 300 nm/ min (static)


Plasmalab System 400
with vacuum loadlock

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