Plasma Technology  

Titanium Nitride resistivity variation with N2 flow

Titanium Nitride reflectivity variation with N2 flow

TiN Magnetron Sputter Deposition

magnetron sputtering

Plasmalab System 400
(max 4 200 mm targets)

Magnetron Sputtering
rotating table
pulsed DC magnetron

Resistivity 200 µ ohm cm
Reflectivity (@436 nm relative to Si)
  > 45 % (500 nm layer)
rate: 5 nm/ min (rotating)
uniformity: +/- 5 % (6” wafer)
rate: 60 nm/ min (static)

Plasmalab System 400
with vacuum loadlock

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