Plasma Technology  



Thick Photoresist Etching for trilevel structures

left SEM:
5 µm deep PR RIE
etch rate: 50 - 100 nm/ min
result from Uni Kassel

right SEM:
10 µm deep ICP RIE*
etch rate: > 200 nm/ min
result from Siemens, ZFE

*The ICP technology has replaced the ECR technology used here originally, see ICP vs ECR.

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