Plasma Technology  

Plasmalab System 100
ICP- RIE, with loadlock



OPT application lab:
230 nm deep VO2 etch

VO2 Dry Etching


Reactive Ion Etching
with ICP Source (13.56 MHz)
Inductive Coupled Plasma
13.56 MHz Plasma Excitation
RF driven substrate ectrode

F-based etch process
depth:       230 nm
etch rate:  34 nm/min
profile:       >75°


ICP schematic

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