Plasma Technology  


FIB-made crossection of tungsten gratings.
40 and 35 nm half-pitch, 300 nm high, i.e. AR 8.5


courtesy of KTH Stockholm
low temperature RIE
Dr. Anders Holmberg, Biomedical and x-ray physics


OPT application lab: ICP RIE
anisotropic W etch at - 40° C
30 nm lines, aspect ratio 3 : 1
at 60 nm/ min, Cr mask


Plasmalab System 100
with loadlock and ICP380 source

W Etching


Technology:
Reactive Ion Etching
Inductive Coupled Plasma Source
Helium backside cooling
very uniform temperature control over the whole wafer
F based process without sidewall polymer

Results:
rate : 50 (RIE)- 200 nm/min (ICP - RIE)
uniformity: < +/- 3 %
controllable wall profile (by O2 and temperature)
selectivity to Cr mask > 20 : 1
selectivity to PR mask ca 5 : 1
selectivity to SiO2 mask 10 : 1

 

OPT application lab: ICP RIE
W etch at room temperature
88° profile at 150 nm/ min
PR mask (stripped)

 

ICP technology



OPT application lab: ICP RIE
W etch at room temperature
88° profile at 150 nm/ min
PR mask (stripped)

OPT application lab: ICP RIE
30 nm lines etched into W
at 60 nm/ min, Cr mask

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