Plasma Technology  




ALD schematic
valve between remote ICP source
and chamber,
spectroscopic ellipsometry optional



FlexAl

WN ALD by remote plasma



Precursors:
WNBURE
NH3 plasma

This work was done at 300° C.

GPC 0.45 Å/cycle

growth rate: 0.22 nm/ min

Refractive Index 3.10

 

 

 


OpAl

Why remote plasma ALD ?

A "remote plasma" makes sure, the substrates
are NOT in contact with the plasma !

The remote plasma just cracks molecules,
so that very reactive species can be used for
the growth process.

Such reactive species often enable a very
efficient plasma preclean/ conditioning of the
substrates, lead to cleaner films and lower
the deposition temperature.

In Oxford systems it is possible to run
ALD processes using
- the thermal only method
- ozone assisted processes
- remote plasma assisted processes
together without any hardware change.
Multiple step processes using all technologies
can be chosen from the software.


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