PlasmaPro 100

link to homepage email to OPT

Reactive Ion Etching : RIE

  • 13.56 MHz driven parallel plate reactor
  • cooled substrate electrodes
  • shower head gas inlet optimised for RIE
  • high conductance vacuum layout
  • etch modes: RIE/ PE / ICP

 

PlasmaPro 100
with ICP source (for 200 mm substrates)

Plasma Enhanced Chemical Vapour Deposition: PECVD

  • 13.56 MHz driven parallel plate reactor
  • kHz/ "frequency mixing" and VHF optional
  • shower head gas inlet optimised for PECVD
  • 400 C, 700 C, 800 C and
    1200° C substrate electrodes

Concept

The PlamaPro 100 uses the same modules
as the Plasmalab System 100, so the processes
do not change.

 

PlasmaPro 100
dual chamber
cluster system

 

Options