Plasmalab System 100

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Reactive Ion Etching : RIE

  • 13.56 MHz driven parallel plate reactor
  • cooled substrate electrodes
  • shower head gas inlet optimised for RIE
  • high conductance vacuum layout
  • etch modes: RIE/ PE / ICP
Plasmalab System 100 with manual vacuum loadlock /6 kB

Plasma Enhanced Chemical Vapour Deposition: PECVD

  • 13.56 MHz driven parallel plate reactor
  • kHz and "frequency mixing" optional
  • shower head gas inlet optimised for PECVD
  • 400 C and 700 C substrate electrodes

Concept

 

Plasmalab System 100 with ICP source/ 7 kB

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