PlasmaPro NGP80

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Reactive Ion Etching : RIE

  • 13.56 MHz driven parallel plate reactor
  • substrate electrode: 240 mm
  • shower head gas inlet optimised for RIE
  • high conductance vacuum layout
  • etch modes: RIE/ PE/ ICP
  • wide temperature range electrode optional

 

PlasmaPro NGP80

Plasma Enhanced Chemical Vapour Deposition: PECVD

  • 13.56 MHz driven parallel plate reactor
  • kHz and "frequency mixing"optional
  • substrate electrode: 240 mm
  • shower head gas inlet optimised for PECVD
  • 400 C and 700/ 800 C substrate tables

Options (RIE, PECVD)

Concept