Nanofab

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Nanofab

Nanofab - choice of substrate holders:

with 650° C table

with high agility 800° C table

with high agility 1200° C table

suitable for small pieces up to 200 mm



SYSTEM FEATURES/ OPTIONS

Vacuum system - low pressure operation

vacuum loadlock

automatic pressure control

optional turbo for very low base pressure
before process

plasma for radical supply and/ or ion bombardment
(surface pretreatment by H2, O2, ion bombardment)

optional flexible vapour delivery system (FVD)

optional DC bias at the substrate electrode

 

dual chamber system:
for example: Nanowire Growth
combined with ALD Deposition


Nanofab
(parallel pate version with
with flexible vapour delivery system)

 

Nanofab
(with high density remote ICP plasma)

 

 

PROCESS FLEXIBILITY

Graphene Growth

(Graphene via Chemical Vapour Deposition (CVD) Plasma-based nanocrystalline graphene (NCG)
Plasma-based vertical graphene)

hexagonal BN Growth

MoS2 Growth

Carbon Nanotubes (CNT, single and multiwall) Growth

Si Nanowire Growth

PECVD of Si, SiN, SiO, SiC at low and high temperatures

a- Si, µc - Si, polySi, SiGe

PECVD and CVD growth using the
flexible vapour delivery system (FVD)


Concept

  • PC Control
  • vacuum loadlock
  • substrate electrodes for max 200 mm wafer
  • small footprint
  • fully clean room compatible
  • through the wall mounting

Options

     

Graphene Growth

SEM image of CVD graphene with Ni foil
(orange arrow pointed to wrinkle)
Substrate: Ni or Cu foil
Pretreatment: H2 atmosphere or
low temperature plasma treatment

PECVD

with kind permission of Sensitec Wetzlar:
conformal deposition of 1 µm SiN over a 1.5 µm step

 

CVD

10 µm thick SiGe showing
excellent contact hole filling
(with kind permission of IMEC)

 

 

Si Nanowire Growth

Si nanowire growth by CVD

Si nanowire growth by CVD
1 µm high, 33 nm diameter
grown at 400°C

 

 

 

Carbon Nanotube Growth

CNT growth
with 13 MHz plasma at 650° C
onto a 5 nm Co catalyst seed layer
70 nm diameter, 1 µm height

 

The Nanofab delivers high performance growth of
nanotubes and nanowires with in-situ catalyst
activation and rigorous process control.

Metal organic precursor delivery for compound
semiconductor nanowires
Aligned carbon nanotube (CNT) growth
Wide range of nanowire materials
Si, Ge, ZnO, GaO, SiC, GaN, GaAs, GaP, InP, ZnS, InN
Proven repeatable processes
Control of length and diameters
Catalyst annealing
Improved catalyst activation by plasma treatment
Liquid precursor option
Plasma catalyst conditioning

ZnO Nanowire Growth

Vertically aligned ZnO nanorods
on GaN-coated sapphire.
The nanorods have an average length of 400 nm.
The structures are catalysed by Au nanoparticles.
Courtesy of University of Cambridge
Department of Engineering