PlasmaPro Estrelas 100

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Process

gas chopping room temperature process
for very high rates

 

 

Aspect Ratio > 30 : 1

 

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The Estrelas (here with vacuum loadlock)
is a dedicated deep Si etcher.

Bosch Process:
The process can be optimised for:
etch rate > 25 µm/ min (10 % open area)
selectivity to PR mask > 250 : 1
selectivity to SiO2 mask > 500 : 1
aspect ratio > 70 : 1
scallop size < 10 nm
notching < 10 nm (SOI kit)
uniformity < +/- 3 % (200 mm wafer)

cassette to cassette production cluster
with 3 Estrelas process modules

Process

 

process optimised for smooth sidewalls
  < 30 nm sidewall roughness

 

50 µm via etched at 16 µm/ min

Concept

The system can be configured
for running the Bosch as well as
the cryo deep Si etch process !

 

clean room interface for a system
with 2 cassettes

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