PECVD
Plasma Enhanced Chemical Vapor Deposition

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  • typical process pressure: 300 - 1.200 mtorr
  • conformal deposition (good step coverage)
  • low substrate temperatures (typ. 200 C - 300 C)
  • excellent control over the film stochiometry
  • SiOxNy refractive index: 1.46 - 2.20 by gas flows
  • available as large batch system

PECVD system layout

PECVD schematic/ 8 kB

Typical Applications:
  • substrate electrode on ground potential
  • heated substrate electrode: max 400 C or 700 C
  • top electrode RF driven (MHz and/ or kHz)
  • frequency mixing
  • shower head gas inlet (in the top electrode)
  • parameter: gas flows, pressure, RF power