Remote PECVD (ICP)

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  • typical process pressure: 100 - 1.000 mtorr
  • no ion bombardment at the substrates

 

Typical Applications:

  • low damage SiN deposition on solar cells
  • low damage  deposition on 3-5's
ICP - PECVD/ 5 kB

"Inductive Coupled Plasma" with 13.56 MHz excitation

ICP is fully automatic (RF automatch unit)

"remote plasma"
no direct contact between the plasma and the substrate

older remote PECVD technology: MWDS

  • lower (substrate) electrode grounded, RF driving opt.
  • substrate electrode heated
  • automatic height adjustment of the lower electrode opt.
  • gas inlet through source and through distribution ring
  • parameter: gas flows, pressure, source power, temperature
  • plasma burns in the source only