ICP was introduced in 1991- 1995 for plasma processing.
most important feature:
independent control of ion energy and ion current density
ICP is fully automatic (2 RF automatch units)
comparison: ICP vs the older ECR technology
- lower (substrate) electrode grounded, RF driving opt.
- substrate electrode cooled or heated
- automatic height adjustment of the electrode opt.
- gas inlet through source and through distribution ring
- high conductance pipework
- parameter: gas flows, pressure, source power, temperature