replaced by ICP - RIE

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  • typical process pressure: 0.5 - 5 mtorr
  • plasma density: ca 5 x E11 / cm3
  • plasma in contact with the substrate
  • low energy ion current during deposition
  • Ion Current (Plasma Density) dependent on ECR power

Typical Applications:

  • low damage etching of 3-5's
  • sputter etching applications (Au, Pt)
ECR schematic/ 9 kB

ECR was introduced at OPT in 1985.

ICP was introduced much later (1991- 1995) for plasma processing.

most important with both:
independent control of ion energy and ion current density

ICP is fully automatic (2 RF automatch units)

ECR suffers from the manual or "semi-automatic" matching and the potential of "mode hopping", so it has been replaced by ICP !

  • lower (substrate) electrode RF driven
  • substrate electrode cooled
  • thermal contact by He backside cooling
  • automatic height adjustment of the electrode opt.
  • gas inlet through source and through distribution ring
  • high conductance pipework
  • parameter: gas flows, pressure, ECR power, table power